Why InSb is a semiconductor?
Table of Contents
Why InSb is a semiconductor?
Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors (E o∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications. Its relatively high electron mobility (μn∼7×104 cm2/V-s at 300 K, Ref.
Is InSb a semiconductor?
Indium antimonide (InSb) is a III–V compound semiconductor. It has several applications as infrared detectors, thermal imaging cameras etc. InSb detectors are sensitive in the wavelength range of 1–5 μm. Among all the III–V semiconducting compounds, InSb has the lowest melting temperature at 523 °C [1].
What type of bond is InSb?
InSb is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form corner-sharing InSb4 tetrahedra. All In–Sb bond lengths are 2.87 Å.
What does InSb stand for?
INSB
| Acronym | Definition |
|---|---|
| INSB | Insert String Byte |
| INSB | International Naval Surveys Bureau |
| INSB | Indium Antimony (microwave integrated circuit) |
| INSB | International Nursery School Belgrade (Belgrade, Serbia) |
What is the band gap of CdTe?
CdTe is one of the leading materials for low cost, high efficiency thin-film solar cells, because it has a high absorption coefficient and a nearly ideal band gap of 1.48 eV for solar cell according to the Shockley-Queisser limit.
What type of semiconductor is InAs?
Indium arsenide (InAs) is a group III-V semiconductor compound with high electron mobility and a narrow direct band-gap. Under normal conditions, it crystallizes into a cubic zinc-blende structure [1], with a lattice parameter a = 6.058 Å [2, 3].
What type of semiconductor is CdTe?
Cadmium telluride (CdTe) (Bonnet (2012))is a direct-bandgap semiconductor with that bandgap well matched to the solar spectrum. CdTe thin-film laboratory cell efficiency of 18.3% has been achieved, and the record module efficiency currently stands at 15.3%.
What is the crystal structure of CdTe?
Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window….Cadmium telluride.
| Names | |
|---|---|
| Structure | |
| Crystal structure | Zinc blende |
| Space group | F43m |
| Lattice constant | a = 0.648 nm |
What material is InAs?
Indium arsenide
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.
What is the band gap of pure Si?
1.1 eV
The energy gap of pure Si is 1.1 eV.
What is the bandgap of CdTe?
Introduction. Cadmium Telluride (CdTe) with its energy bandgap (Eg) of 1.45 eV is an optimum semiconducting material for solar cells.
Is CdTe p type or n-type?
They state that undoped CdTe is p-type semiconductor, but addition of In creates n-type material. They define a narrow concentration range over which the CZT transforms from p-type to n-type.
What type of bonding is CdTe?
For CdTe, the bonding is predominantly covalent (with some slight ionic character) on the basis of the relative positions of Cd and Te in the periodic table. For rubber, the bonding is covalent with some van der Waals. (Rubber is composed primarily of carbon and hydrogen atoms.)
What is InAs?
INAS, the Institutional Need Analysis System, is a high-speed processing system software that permits financial aid professionals to calculate and recalculate expected family contributions. INAS accepts data electronically, so there’s no need to enter data manually.
What is band gap of silicon?
Si (Silicon) has a band gap of 1.12 eV (electron volt).
What is the type and value of silicon band gap at 273 K?
Semiconductor Properties: Band Gaps, Effective Masses, Dielectric Constants
| Semiconductor | Energy gap (eV) at 273 K | Dielectric constant |
|---|---|---|
| Ge | 0.67 | 16 |
| Si | 1.14 | 12 |
| InSb | 0.16 | 18 |
| InAs | 0.33 | 14.5 |
What is p-type wafer?
The term p-type refers to the fact that the cell is built on a positively charged (hence p-type) silicon base. Indeed, the wafer is doped with boron, which has one electron less than silicium. The top of the wafer is then negatively doped (n-type) with phosphorous, which has one electron more than silicium.
How is CdTe made?
Production. The most common CdTe solar cells consist of a p-n heterojunction structure containing a p-doped CdTe layer matched with an n-doped cadmium sulfide (CdS) or magnesium zinc oxide (MZO) window layer. Typical CdTe thin-film deposition techniques include vapor-transport deposition and close-spaced sublimation.
How can I join InAs?
How to Join INA
- NDA/NA Exam. Through this, only male candidates who have Physics and Maths in 12th can apply. NDA cadets opting to join the Navy complete three years of joint training at NDA, Khadakwasla with the Army and Air Force cadets.
- Through 10+2 B.Tech Entry. This is a new entry scheme of the Navy.
- Through CDS Exam.
